IXTK400N15X4

IXYS
747-IXTK400N15X4
IXTK400N15X4

Ürt.:

Açıklama:
MOSFET'ler TO264 150V 400A N-CH 4CLASS

ECAD Modeli:
Bu dosyayı ECAD Aracınız için dönüştürmek için ücretsiz Library Loader dosyasını indirin. ECAD Model hakkında daha fazla bilgi edinin.

Stokta Var: 1.409

Stok:
1.409
Hemen Gönderilebilir
Siparişte:
375
Beklenen 17.04.2026
Fabrika Teslim Süresi:
41
Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
49,86 € 49,86 €
44,42 € 444,20 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
IXYS
Ürün Kategorisi: MOSFET'ler
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
150 V
400 A
3.1 mOhms
- 20 V, 20 V
4.5 V
430 nC
- 55 C
+ 175 C
1.5 kW
Enhancement
HiPerFET
Tube
Marka: IXYS
Yapılandırma: Single
Düşüş Zamanı: 8 ns
İleri İletkenlik - Min: 100 S
Ürün Tipi: MOSFETs
Yükseliş zamanı: 22 ns
Seri: X4-Class
Fabrika Paket Miktarı: 25
Alt kategori:: Transistors
Transistör Tipi: 1 N-Channel
Tipik Kapatma Gecikme Süresi: 180 ns
Tipik Açılma Gecikme Süresi: 40 ns
Birim Ağırlık: 10 g
Bulunan ürünler:
Benzer ürünleri göstermek için en az bir onay kutusu seçin
Bu kategorideki benzer ürünleri göstermek için yukarıda en az bir onay kutusu seçin.
Seçilen özellikler: 0

Bu işlev için JavaScript'in etkinleştirilmesi gerekir.

CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Supercharged Solutions for EV Charging Systems

Littelfuse application expertise has helped to engineer some of the most advanced systems for EV charging stations. Whether developing alternating current (AC) charging systems, which provide AC power to a vehicle’s on-board charger, or direct current (DC) fast chargers, which provide DC power to a vehicle’s battery system, Littelfuse can help designers meet three key goals of safety, efficiency, and reliability.

X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.