FP10R12W1T7BOMA1

Infineon Technologies
726-FP10R12W1T7BOMA1
FP10R12W1T7BOMA1

Ürt.:

Açıklama:
IGBT Modülleri EASY

ECAD Modeli:
Bu dosyayı ECAD Aracınız için dönüştürmek için ücretsiz Library Loader dosyasını indirin. ECAD Model hakkında daha fazla bilgi edinin.

Stok Durumu

Stok:
Stokta Yok
Fabrika Teslim Süresi:
12 Hafta Fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
30,93 € 30,93 €
26,08 € 260,80 €
21,20 € 2.544,00 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: IGBT Modülleri
IGBT Silicon Modules
3-Phase Inverter
1.2 kV
1.6 V
10 A
100 nA
- 40 C
+ 175 C
Tray
Marka: Infineon Technologies
Ürün Tipi: IGBT Modules
Seri: Trenchstop IGBT7
Fabrika Paket Miktarı: 24
Alt kategori:: IGBTs
Teknoloji: Si
Ticari Unvan: EasyPIM
Parça No Takma Adları: FP10R12W1T7 SP005351582
Bulunan ürünler:
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Seçilen özellikler: 0

CNHTS:
8504409100
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

TRENCHSTOP™ IGBT7 Discretes & Modules

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable-speed drives. If only half of all industrial drives had electric speed control, 20% of energy or 17 million tons of CO2 could be saved. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.

EasyPIM™ IGBT Module

Infineon Technologies EasyPIM™ IGBT Module is a 3-phase input rectifier PIM IGBT module with TRENCHSTOP™ IGBT7, emitter controlled 7 diode, and NTC/PressFIT technology. This module features enhanced controllability of dv/dt, improved FWD softness, optimized switching losses, and 8µs short-circuit robustness. The EasyPIM (Power Integrated Module) is very small in size that helps in attaining higher power density. This module lowers system cost and losses to meet energy efficiency requirements. Typical applications include auxiliary inverters, air conditioning, servo motor, and Heating Ventilation and Air Conditioning (HVAC).

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.