IPB60R070CFD7ATMA1

Infineon Technologies
726-IPB60R070CFD7ATM
IPB60R070CFD7ATMA1

Ürt.:

Açıklama:
MOSFET'ler HIGH POWER_NEW

ECAD Modeli:
Bu dosyayı ECAD Aracınız için dönüştürmek için ücretsiz Library Loader dosyasını indirin. ECAD Model hakkında daha fazla bilgi edinin.

Stokta Var: 831

Stok:
831 Hemen Gönderilebilir
Fabrika Teslim Süresi:
9 Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
5,03 € 5,03 €
3,59 € 35,90 €
2,60 € 260,00 €
2,59 € 1.295,00 €
Tam Makara (1000'in katları olarak sipariş verin)
2,42 € 2.420,00 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: MOSFET'ler
RoHS:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
31 A
70 mOhms
- 20 V, 20 V
4.5 V
67 nC
- 55 C
+ 150 C
156 W
Enhancement
Reel
Cut Tape
Marka: Infineon Technologies
Yapılandırma: Single
Montaj Ülkesi: Not Available
Dağıtım Ülkesi: Not Available
Menşe Ülke: DE
Düşüş Zamanı: 6 ns
Ürün Tipi: MOSFETs
Yükseliş zamanı: 23 ns
Fabrika Paket Miktarı: 1000
Alt kategori:: Transistors
Transistör Tipi: 1 N-Channel
Tipik Kapatma Gecikme Süresi: 99 ns
Tipik Açılma Gecikme Süresi: 26 ns
Parça No Takma Adları: IPB60R070CFD7 SP002621062
Birim Ağırlık: 4 g
Bulunan ürünler:
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Seçilen özellikler: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.