IPD60R180CM8XTMA1

Infineon Technologies
726-IPD60R180CM8XTMA
IPD60R180CM8XTMA1

Ürt.:

Açıklama:
MOSFET'ler HIGH POWER_NEW

Yaşam Döngüsü:
Yeni Ürün:
Bu üreticiden yeni.
ECAD Modeli:
Bu dosyayı ECAD Aracınız için dönüştürmek için ücretsiz Library Loader dosyasını indirin. ECAD Model hakkında daha fazla bilgi edinin.

Stokta Var: 2.025

Stok:
2.025 Hemen Gönderilebilir
Fabrika Teslim Süresi:
8 Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
1,75 € 1,75 €
1,18 € 11,80 €
0,845 € 84,50 €
0,727 € 363,50 €
0,687 € 687,00 €
Tam Makara (2500'in katları olarak sipariş verin)
0,584 € 1.460,00 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: MOSFET'ler
RoHS:  
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
600 V
18 A
180 mOhms
- 20 V, 20 V
4.7 V
17 nC
- 55 C
+ 150 C
127 W
Enhancement
CoolMOS
Reel
Cut Tape
Marka: Infineon Technologies
Yapılandırma: Single
Düşüş Zamanı: 12.8 ns
Ürün Tipi: MOSFETs
Yükseliş zamanı: 6 ns
Seri: 600V CM8
Fabrika Paket Miktarı: 2500
Alt kategori:: Transistors
Transistör Tipi: 1 N-Channel
Tipik Kapatma Gecikme Süresi: 88.4 ns
Tipik Açılma Gecikme Süresi: 17.2 ns
Parça No Takma Adları: IPD60R180CM8 SP005578057
Bulunan ürünler:
Benzer ürünleri göstermek için en az bir onay kutusu seçin
Bu kategorideki benzer ürünleri göstermek için yukarıda en az bir onay kutusu seçin.
Seçilen özellikler: 0

Bu işlev için JavaScript'in etkinleştirilmesi gerekir.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.