FFSP1665A

onsemi
863-FFSP1665A
FFSP1665A

Ürt.:

Açıklama:
SiC Schottky Diodes 650V 16A SIC SBD

Veri Sayfası:
ECAD Modeli:
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Daha Fazla Bilgi
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Stokta Var: 263

Stok:
263 Hemen Gönderilebilir
Fabrika Teslim Süresi:
12 Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
3,33 € 3,33 €
2,67 € 26,70 €
2,15 € 215,00 €
2,13 € 1.065,00 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
onsemi
Ürün Kategorisi: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
16 A
650 V
1.5 V
90 A
200 uA
- 55 C
+ 175 C
FFSP1665A
Tube
Marka: onsemi
Pd - Güç Dağılımı: 150 W
Ürün Tipi: SiC Schottky Diodes
Fabrika Paket Miktarı: 50
Alt kategori:: Diodes & Rectifiers
Ticari Unvan: EliteSiC
Vr - Ters Voltaj: 650 V
Birim Ağırlık: 2 g
Bulunan ürünler:
Benzer ürünleri göstermek için en az bir onay kutusu seçin
Bu kategorideki benzer ürünleri göstermek için yukarıda en az bir onay kutusu seçin.
Seçilen özellikler: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
MXHTS:
8541100101
ECCN:
EAR99

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

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