IDH10G65C5XKSA2

Infineon Technologies
726-IDH10G65C5XKSA2
IDH10G65C5XKSA2

Ürt.:

Açıklama:
SiC Schottky Diodes SIC DIODES

ECAD Modeli:
Bu dosyayı ECAD Aracınız için dönüştürmek için ücretsiz Library Loader dosyasını indirin. ECAD Model hakkında daha fazla bilgi edinin.

Stokta Var: 325

Stok:
325
Hemen Gönderilebilir
Siparişte:
500
Beklenen 2.03.2026
Fabrika Teslim Süresi:
9
Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
3,69 € 3,69 €
1,89 € 18,90 €
1,72 € 172,00 €
1,65 € 825,00 €
1,33 € 1.330,00 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
10 A
650 V
1.5 V
82 A
500 nA
- 55 C
+ 175 C
XDH10G65
Tube
Marka: Infineon Technologies
Pd - Güç Dağılımı: 89 W
Ürün Tipi: SiC Schottky Diodes
Fabrika Paket Miktarı: 500
Alt kategori:: Diodes & Rectifiers
Ticari Unvan: CoolSiC
Vr - Ters Voltaj: 650 V
Parça No Takma Adları: IDH10G65C5 SP001632410
Birim Ağırlık: 2 g
Bulunan ürünler:
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Seçilen özellikler: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).