TJ10S04M3L,LXHQ
Ürün Teknik Özelliklerine Bakın
Ürt.:
Açıklama:
MOSFET'ler 27W 1MHz Automotive; AEC-Q101
Stokta Var: 19.147
-
Stok:
-
19.147 Hemen GönderilebilirBeklenmeyen bir hata oluştu. Lütfen daha sonra tekrar deneyin.
Fiyatlandırma (EUR)
| Miktar | Birim Fiyat |
Toplam Fiyat
|
|---|---|---|
| 0,783 € | 0,78 € | |
| 0,605 € | 6,05 € | |
| 0,42 € | 42,00 € | |
| 0,351 € | 175,50 € | |
| 0,32 € | 320,00 € | |
| Tam Makara (2000'in katları olarak sipariş verin) | ||
| 0,284 € | 568,00 € | |
| 0,271 € | 1.084,00 € | |
| 0,27 € | 2.700,00 € | |
Veri Sayfası
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Türkiye

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2