TRS6A65F,S1Q

Toshiba
757-TRS6A65F,S1Q
TRS6A65F,S1Q

Mfr.:

Description:
SiC Schottky Diodes RECT 650V 6A RDL SIC SKY

Datasheet:
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Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220F-2L
Single
6 A
650 V
1.45 V
52 A
300 nA
+ 175 C
650 V
Tube
Brand: Toshiba
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Part # Aliases: TRS6A65F,S1Q(S2
Unit Weight: 1,830 g
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

In Stock: 148

Stock:
148 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,81 € 2,81 €
1,44 € 14,40 €
1,24 € 124,00 €
1,03 € 515,00 €

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