GB02SLT12 Silicon Carbide Power Schottky Diodes

GeneSiC Semiconductor GB02SLT12 Silicon Carbide(SiC) Schottky Diodes are high voltage, high frequency, and reverse recovery-free diodes. These GB02SLT12 high-temperature capable diodes are SMB packages and offer good conversion efficiency in small footprints. The GB02SLT12 SiC diodes provide fast switching speed, low capacitance, and low forward voltage. These GB02SLT12 diodes are designed for solar inverters, voltage multiplier circuits used in X-ray, laser, and particle generator power supplies. The GB02SLT12 diodes operate in a temperature range from -55°C to 175°C with a repetitive peak reverse voltage of 1200V. The GeneSiC diodes are halogen-free and RoHS compliant.