ADPA1116 GaN Power Amplifiers

Analog Devices ADPA1116 GaN Power Amplifiers feature a 39.5dBm saturated output power (P_OUT) power added efficiency (PAE) of 40% and a power gain of 23.5dB typical from 0.5GHz to 5GHz at an input power (P_IN) of 16.0dBm. The RF input and output are internally matched and AC-coupled. A drain bias voltage of 28V is applied to the V_DD1 and V_DD2 pins, which have integrated bias inductors. The drain current is set using a negative voltage to the V_GG1 pin. The ADPA1116 is manufactured using a gallium nitride (GaN) process and is available in a 32-lead chip scale package. The ADI ADPA1116 amps are specified for operation from -40°C to +85°C.