GANSPIN611 GaN High-Power Density Half-Bridge

STMicroelectronics GANSPIN611 GaN High-Power Density Half-Bridge is an advanced power system-in-package integrating two enhancement-mode GaN transistors in a half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver. The integrated power GaNs have an R_DS(ON) of 138mΩ and a 650V drain-source breakdown voltage, while the integrated bootstrap diode can easily supply the high side of the embedded gate driver.