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STMicroelectronics STL059N4S8AG Power MOSFET
03.31.2026
03.31.2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
12.04.2025
12.04.2025
E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.
STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor
11.07.2025
11.07.2025
Built on GaN technology and designed for demanding power conversion applications.
STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor
10.28.2025
10.28.2025
E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.
STMicroelectronics M2P45M12W2-1LA Automotive Power Module
09.26.2025
09.26.2025
Offers a six-pack topology with NTC for the DC/DC converter stage of the OBC in electric vehicles.
STMicroelectronics M2TP80M12W2-2LA Automotive Power Module
09.26.2025
09.26.2025
Offers a 3-phase 4-wire PFC topology with integrated NTC for the OBC in hybrid & electric vehicles.
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
05.22.2025
05.22.2025
Created by implementing an advanced proprietary trench gate field-stop structure.
STMicroelectronics ESDAxWY Automotive Unidirectional ESD Protection
01.10.2025
01.10.2025
TVS designed to protect sensitive electronics in harsh environments.
STMicroelectronics TN8050H-12WL High Temperature SCR Thyristor
01.01.2025
01.01.2025
Suitable for industrial applications that require high immunity with lower gate current.
STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT with Diode
12.24.2024
12.24.2024
Combines two IGBTs and diodes in a half-bridge topology.
STMicroelectronics ESDZX168B-1BF4 Bidirectional Single Line TVS Diode
10.14.2024
10.14.2024
The device is designed to protect data lines or other I/O ports against ESD transients.
STMicroelectronics STTH120RQ06-M2Y 600V Ultra-Fast Bridge Module
10.08.2024
10.08.2024
Suited for use in charger applications, either integrated into the vehicle or in a charging station.
STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT
09.12.2024
09.12.2024
Designed using an advanced proprietary trench gate field stop structure.
STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBT
09.12.2024
09.12.2024
Developed using an advanced trench gate field stop structure.
STMicroelectronics ESDA5WY Automotive Unidirectional ESD Protection
09.10.2024
09.10.2024
Automotive unidirectional transient voltage suppressor (TVS) developed for harsh environments.
STMicroelectronics STBR3012L2Y-TR Automotive High Voltage Rectifier
08.09.2024
08.09.2024
High-quality design with consistently reproducible characteristics and intrinsic ruggedness.
STMicroelectronics N-Channel MDmesh K6 Power MOSFETs
07.22.2024
07.22.2024
800V, Zener-protected, 100% avalanche tested, and ideal for flyback converters and LED lighting.
STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT
07.03.2024
07.03.2024
1200V, 40A, low-loss, offers low thermal resistance, and comes in a TO-247 long leads package.
STMicroelectronics STripFET F8 N-Channel Power MOSFETs
12.01.2023
12.01.2023
AEC-Q101 qualified and offers a comprehensive package solution from 30V to 150V.
STMicroelectronics STGD4H60DF 600V 4A High-Speed H Series IGBT
10.31.2023
10.31.2023
Designed with an advanced trench gate field-stop structure.
STMicroelectronics M1F45M12W2-1LA ACEPACK DMT‑32 Power Module
10.19.2023
10.19.2023
Designed for hybrid and electric vehicles' DC/DC converter stage.
STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET
10.01.2023
10.01.2023
Uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology.
STMicroelectronics SH63N65DM6AG Power MOSFET
08.18.2023
08.18.2023
Automotive-grade N-channel MDmesh DM6 half‑bridge topology power MOSFET with 650V blocking voltage.
STMicroelectronics STPSTxH100/Y Trench Power Schottky Diodes
06.29.2023
06.29.2023
Meets efficiency requirements at high switching frequencies.
STMicroelectronics STL120N10F8 100V N-Channel STripFET MOSFET
05.08.2023
05.08.2023
The device utilizes ST's STripFET F8 technology featuring an enhanced trench gate structure.
Görüntülenen: 1 - 25 / 39
Bourns CDSOT23-SM712-Q Surface Mount TVS Diode
05.12.2026
05.12.2026
Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.
Littelfuse TP1KSMB-FL FlatSuppressX™ TVS Diyotlar
05.04.2026
05.04.2026
Designed specifically to protect sensitive electronic equipment from voltage transients.
Littelfuse TP5.0SMD-FL FlatSuppressX™ TVS Diyotlar
05.04.2026
05.04.2026
5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.
Littelfuse AK-FL TVS Diyotlar
05.04.2026
05.04.2026
Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.
Littelfuse SJx08x High-Temperature SCRs
04.24.2026
04.24.2026
Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.
RECOM Power ICs, Transformers, & Discrete Solutions
04.24.2026
04.24.2026
Features components ideal for energy, industrial, and medical applications.
Littelfuse QVx35xHx High-Temperature Alternistor TRIACs
04.24.2026
04.24.2026
Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.
Diotec Semiconductor BAS70-05W Schottky Diode
04.16.2026
04.16.2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04.14.2026
04.14.2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04.10.2026
04.10.2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
Vishay RS07x Hızlı Geri Kazanımlı Doğrultucular
04.07.2026
04.07.2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.
Vishay S07x-M Standart Geri Kazanımlı Yüksek Gerilim Doğrultucuları
04.07.2026
04.07.2026
Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04.07.2026
04.07.2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
onsemi NTMFD0D9N02P1E MOSFET
04.06.2026
04.06.2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04.02.2026
04.02.2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04.02.2026
04.02.2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Vishay VS-HOT200C080 200 A 80 V Güç MOSFET Modülü
04.02.2026
04.02.2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Toshiba N-Channel/P-Channel Power MOSFETs
03.31.2026
03.31.2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03.31.2026
03.31.2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03.27.2026
03.27.2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
Infineon Technologies Multi-Purpose Diodes for ESD Protection
03.27.2026
03.27.2026
Offering the best protection in a small footprint, the diodes deliver superior ESD performance.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03.27.2026
03.27.2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
RECOM Power RVS002 Micropower Isolated Power Bridge Rectifiers
03.24.2026
03.24.2026
Compact and ideal for micro-power isolated power supply applications with limited space.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03.24.2026
03.24.2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03.20.2026
03.20.2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Görüntülenen: 1 - 25 / 1214
