UJ3C SiC FETs

onsemi UJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection. 

Sonuçlar: 11
Seçin Resim Parça Numarası Ürt. Açıklama Veri Sayfası Stok Durumu Fiyatlandırma (EUR) Tablodaki sonuçları sipariş verdiğiniz miktar uyarınca birim fiyata göre filtreleyin. Miktar RoHS ECAD Modeli Montaj Stili Paket / Kasa Kanal Sayısı Vds - Tahliye-Kaynak Arıza Voltajı Id - Sürekli Tahliye Akımı Rds Açık - Tahliye-Kaynağı Direnci Vgs - Kapı-Kaynağı Voltajı Vgs th - Kapı-Kaynağı Eşik Voltajı Qg - Kapı Şarjı Minimum Çalışma Sıcaklığı Maksimum Çalışma Sıcaklığı Pd - Güç Dağılımı Kanal Modu Vasıf Ticari Unvan
onsemi SiC MOSFETs 650V/30MOSICFETG3TO220 425Stokta Var
1.000Beklenen 4.01.2027
22,87 €
18,31 €
15,83 €
14,19 €
Min.: 1
Çoklu.: 1
Maks.: 1.000
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/40MOSICFETG3TO24 381Stokta Var
31,53 €
23,44 €
22,24 €
Min.: 1
Çoklu.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO247-3 679Stokta Var
10,40 €
5,72 €
5,71 €
Min.: 1
Çoklu.: 1
Maks.: 300
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO247-3 513Stokta Var
23,01 €
14,28 €
Min.: 1
Çoklu.: 1
Maks.: 300
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG3TO24 590Stokta Var
17,75 €
11,31 €
Min.: 1
Çoklu.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 34.5 A 90 mOhms - 25 V, + 25 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG3TO24 1.202Stokta Var
18,09 €
11,02 €
Min.: 1
Çoklu.: 1
Maks.: 600
Through Hole TO-247-3 1 Channel 1.2 kV 34.5 A 90 mOhms - 12 V, + 12 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO24 381Stokta Var
18,21 €
11,11 €
Min.: 1
Çoklu.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO2 445Stokta Var
11,96 €
9,12 €
7,59 €
6,77 €
Min.: 1
Çoklu.: 1
Maks.: 600
Through Hole TO-247-3 1 Channel 1.2 kV 18.4 A 180 mOhms - 25 V, + 25 V 3.5 V 30 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO220-3 27Stokta Var
2.000Beklenen 29.01.2027
9,51 €
6,63 €
Min.: 1
Çoklu.: 1
Maks.: 1.000
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-3 160Stokta Var
Kesilmiş Bant
9,86 €
7,14 €
5,94 €
5,30 €
Makara
4,95 €
Min.: 1
Çoklu.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO263-3 79Stokta Var
Kesilmiş Bant
22,42 €
17,96 €
Makara
14,80 €
Min.: 1
Çoklu.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 66 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 250 W Enhancement AEC-Q101 SiC FET