Broadcom APML-600JV/JT Photo MOSFETs
Broadcom APML-600JV/JT Photo MOSFETs are high-voltage photo MOSFETs designed for automotive applications. These MOSFETs consist of an AlGaAs infrared Light Emitting Diode (LED) input stage that is optically coupled to a high-voltage output detector circuit. This detector consists of a high-speed photovoltaic diode array and driver circuitry to switch ON/OFF two discrete high-voltage MOSFETs. The APML-600JV/JT photo MOSFET turns ON (contact closes) with a minimum input current of 1.5mA through the input LED. The photo MOSFET turns OFF (contact opens) with an input voltage of 0.4V or less. The APML-600JV/JT MOSFETs feature a compact solid-state bi-directional signal switch and are AEC-Q101 qualified. The APML-600JV/JT MOSFETs provide reinforced insulation and reliability to deliver safe signal isolation in automotive and high-temperature industrial applications. Ideally, these MOSFETs are used in battery insulation resistance measurement/leakage detection and Battery Management Systems (BMS).
Features
- Compact solid-state bi-directional signal switch
- AEC-Q101 qualified
- Automotive temperature range:
- APML-600JV: TA = -40ºC to 105ºC
- APML-600JT: TA = -40ºC to 125ºC
- 1500V breakdown voltage VO(OFF) at IO(OFF) = 250μA
- Avalanche-rated MOSFETs
- Low off-state leakage current:
- APML-600JV: IO(OFF) <500nA @ VDS = 1000V
- APML-600JT: IO(OFF) <1000nA @ VDS = 1000V
- On-resistance: RON <900Ω at IO = 1mA
- Turn-on time: TON <2.0ms
- Turn-off time: TOFF <0.5ms
- 300mil SO-16 package
- Creepage and Clearance ≥8mm (input-output)
- Creepage >5mm (between drain pins of MOSFETs)
- Safety and regulatory approvals:
- IEC/EN/DIN EN 60747-5-5
- Maximum working insulation voltage 1414VPEAK
- UL/cUL 1577, 5000VRMS for 1 minute
Applications
- Battery insulation resistance measurement/leakage detection
- Battery Management System (BMS)
Functional Diagram
Package Outline Drawing
Yayınlandı: 2024-03-12
| Güncellenmiş: 2024-03-25