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Diodes Incorporated DMN52D0LT N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN52D0LT N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and maintain impressive switching performance. This MOSFET features a very low gate threshold voltage, low input capacitance, fast switching speed, and ESD protected gate. The DMN52D0LT MOSFET offers low input/output leakage and is AEC-Q100/101/104/200 qualified and PPAP capable. This MOSFET is Lead-free, RoHS compliant, and operates within the -55°C to 150°C temperature range. Typical applications include motor driving, power management functions, and load switching.

Features

  • Low ON-resistance
  • Very low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • ESD protected gate
  • Lead-free
  • RoHS compliant
  • Halogen and Antimony free

Specifications

  • 50VDSS drain-source voltage
  • ±12VGSS gate-source voltage
  • 1.2A pulsed drain current
  • 350mA maximum continuous body diode forward current
  • -55°C to 150°C operating temperature range
  • Package:
    • SOT523
  • UL flammability classification rating 94V-0
  • Weight:
    • 0.002 grams

Applications

  • Motor driving
  • Power management functions
  • Load switching

Dimensions

Mechanical Drawing - Diodes Incorporated DMN52D0LT N-Channel Enhancement Mode MOSFET
Yayınlandı: 2022-12-27 | Güncellenmiş: 2023-01-09