Geri dön - Diodes Incorporated

Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET is a dual N-channel MOSFET designed to minimize RDS(ON) and maintain impressive switching performance. This MOSFET features low input capacitance, fast switching speed, low input/output leakage, and an ultra-small surface mount package. The DMN52D0UV MOSFET is ESD-protected, Lead-free, RoHS compliant, and Halogen and Antimony free. This MOSFET offers a very low gate threshold voltage and operates within the -55°C to 150°C temperature range. Typical applications include battery management systems, power management functions, and load switches.

Features

  • Dual N-channel MOSFET
  • Low ON-resistance
  • Low gate threshold voltage (1V max)
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package
  • ESD protected
  • Lead-free
  • RoHS compliant
  • Halogen and Antimony free

Specifications

  • 50VDSS drain-source voltage
  • ±12VGSS gate-source voltage
  • 1.2A pulsed drain current
  • 480mA maximum continuous body diode forward current
  • -55°C to 150°C operating temperature range
  • Package:
    • SOT563
  • UL flammability classification rating 94V-0
  • Weight:
    • 0.006 grams

Applications

  • Battery management systems
  • Power management functions
  • Load switches

Dimensions

Mechanical Drawing - Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET
Yayınlandı: 2022-12-27 | Güncellenmiş: 2023-03-06