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Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) and is ideal for high-efficiency power management applications. This MOSFET features low gate charge and low gate-to-drain charge for a fast switching performance. The DMN1057UCA3 MOSFET features a compact and ultra-low-profile design with a height of just 0.26mm, making it ideal for space-constrained applications. This MOSFET offers power dissipation of up to 1.81W and thermal resistance of up to 198.6°C/W. The DMN1057UCA3 N-channel MOSFET is used in battery management, load switches, and battery protection applications.

Features

  • N-channel MOSFET
  • Low on-resistance for efficient switching
  • 12V drain-to-source voltage (VDSS)
  • 8V gate-source voltage (VGSS)
  • Up to 1.81W power dissipation (PD)
  • Up to 198.6°C/W thermal resistance, junction to ambient (@TA=25°C)
  • Compact size suitable for space-constrained designs
  • Fast switching performance
  • Energy-efficient operation
  • Low profile of 0.26mm height
  • ESD-protected gate
  • X4-DSN0607-3 package
  • Totally lead-free and RoHS compliant

Applications

  • Battery management
  • High-efficiency power management
  • Load switches
  • Battery protections

Package Dimensions

Mechanical Drawing - Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET
Yayınlandı: 2025-08-22 | Güncellenmiş: 2025-10-30