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Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

Diodes Incorporated DMTH64M2LPDW Dual N-Channel Enhancement-Mode MOSFET is designed for high-efficiency power switching applications. DMTH64M2LPDW integrates two MOSFETs in a single PowerDI® 5mm x 6mm package, offering compact size and excellent thermal performance. Each channel features a low on-resistance [RDS(on)] and high current capability, ideal for synchronous rectification in DC-DC converters, power management in computing systems, and battery protection circuits. With a maximum drain-source voltage of 60V and continuous drain current up to 90A, this Diodes Inc device ensures fast switching and low conduction losses. The rugged design, combined with low gate charge and high avalanche energy rating, provides reliable operation in demanding environments such as server motherboards, graphics cards, and portable electronics.

Features

  • 100% Unclamped Inductive Switching (UIS) test in production - ensures more reliable and robust end application
  • Thermally efficient package - cooler running applications
  • High conversion efficiency
  • Low RDS(ON) - minimizes on-state losses
  • Low input capacitance
  • Fast switching speed
  • <1.1mm package profile - ideal for thin applications
  • Totally lead-free and fully RoHS compliant
  • Halogen-/antimony-free, Green device

Applications

  • Wireless charging
  • DC-DC converters
  • Power management

Specifications

  • 60V maximum drain-source voltage
  • ±20V maximum gate-source voltage
  • 360A maximum pulsed drain current
  • 90A maximum continuous body diode forward current
  • 360A maximum pulsed body diode forward current
  • 49A maximum avalanche current
  • 125mJ maximum avalanche energy
  • 2.9W to 74W total power dissipation range
  • Off characteristics
    • 60V minimum drain-source breakdown voltage
    • 1µA maximum zero gate voltage drain current
    • ±100nA maximum gate-source leakage
  • On characteristics
    • 1.2V to 2.2V gate threshold voltage range
    • 5.0mΩ to 7.8mΩ maximum static drain-source on-resistance range
    • 1.2V maximum diode forward voltage
  • Thermal resistance
    • 51°C/W junction-to-ambient
    • 2.04°C/W junction-to-case
  • Dynamic characteristics
    • 2963pF typical input capacitance
    • 1070pF typical output capacitance
    • 68pF typical reverse transfer capacitance
    • 0.97Ω typical gate resistance
    • 25nC to 48nC typical total gate charge range
    • 8.5nC typical gate-source charge
    • 7.2nC typical gate-drain charge
    • 5.2ns typical turn-on delay time
    • 22ns typical turn-on rise time
    • 55ns typical turn-off delay time
    • 38ns typical turn-off fall time
    • 56ns typical reverse recovery time
    • 141nC typical reverse recovery charge
  • -55°C to +175°C operating temperature range
  • PowerDI5060-8/SWP (Type UXD) package
  • UL 94V-0 rated molded plastic, Green molding compound
  • Matte tin terminal finish annealed over a copper leadframe, solderable per MIL-STD-202, Method 208
Yayınlandı: 2025-10-22 | Güncellenmiş: 2025-10-31