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Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

Diodes Inc. DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs are designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance. These MOSFETs have a drain-source breakdown voltage (BVDSS) of 25V. The static drain-source on-resistance [RDS(ON)] for Q1 is 6mΩ at VGS = 10V, 7.5mΩ at VGS = 4.5V or Q2 is 2.0mΩ at VGS = 10V, 3.1mΩ at VGS = 4.5V. The continuous drain current (ID) rating for Q1 is 11.6A at VGS = 10V, 10.4A at VGS = 4.5V, or Q2 is 20.1A at VGS = 10V, 16.1A at VGS = 4.5V. These ratings make these Diodes Inc. DMT26M0LDG devices ideal for high-efficiency power-management applications.

Features

  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Lead-free finish and RoHS-compliant
  • Halogen and antimony-free Green device

Specifications

  • PowerDI® 3333-8 package
  • Molded plastic package material with Green molding compound and has a flammability classification rating of UL 94V-0
  • Moisture Sensitivity Level (MSL) 1 per J-STD-020
  • Matte tin annealed finish over copper lead frame terminal and is solderable per MIL-STD-202, Method 208
  • 0.072 grams (approx.) weight

Circuit Diagram

Schematic - Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

Package Outline

Chart - Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs
Yayınlandı: 2025-09-23 | Güncellenmiş: 2025-10-08