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Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current. This MOSFET is designed using advanced trench technology and offers low on‑state resistance, low gate charge, and fast switching times. The DIJ2A7N90 MOSFET features 6.5A peak drain current and 174mJ avalanche-rated energy. This MOSFET is housed in an ITO‑220AB package and is RoHS compliant. Typical applications include DC/DC converters, power supplies, DC drives, and power tools.

Features

  • Advanced trench technology
  • Low on‑state resistance
  • Low gate charge
  • Fast switching times
  • Avalanche rated
  • RoHS compliant

Applications

  • DC/DC converter
  • Power supplies
  • DC drives
  • Power tools

Specifications

  • 900V drain‑source voltage
  • 2.7A continuous drain current at 25°C
  • 6.5A peak drain current
  • 174mJ avalanche-rated energy (VGS=10V, IAS=2.1A, L=79mH, and RG=25Ω)
  • 5nC gate-drain charge
  • -55°C to 150°C junction and storage temperature range

Performance Graph

Performance Graph - Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

Dimension Diagram

Mechanical Drawing - Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
Yayınlandı: 2026-03-03 | Güncellenmiş: 2026-03-06