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Infineon Technologies OptiMOS™ 5 75V-100V Automotive MOSFETs

Infineon Technologies OptiMOS™ 5 75V to 100V Automotive MOSFETs are designed for high-performance applications and feature an extended qualification that goes beyond AEC-Q101 standards. The N-channel enhancement mode device combines a robust design with advanced technology, integrating Linear FET (LINFET) and low RDS(on) FET (ONFET) characteristics into a single package. This dual-gate configuration provides dedicated gate pins for each MOSFET, enhancing flexibility and control in circuit design. The Linear FET boasts an improved Safe Operating Area (SOA) and superior paralleling capabilities, ensuring reliable linear operation under varying conditions. The Infineon Technologies OptiMOS™ 5 75V to 100V MOSFETs operate within a wide -55°C to +175°C temperature range and are available in a PG-HSOF-8-2 package. 

Features

  • OptiMOS power MOSFET for automotive applications
  • Extended qualification beyond AEC-Q101
  • N-channel, enhancement mode, normal level
  • Enhanced electrical testing
  • Robust design
  • Linear FET (LINFET) and low RDS(on) FET (ONFET) in one package
  • Dedicated gate pins for both MOSFETs (dual gate)
  • Linear FET with enhanced SOA and paralleling characteristics for linear operation
  • +175°C maximum operating temperature
  • RoHS compliant
  • 100% avalanche tested
  • Moisture Sensitivity Level (MSL) 1 up to +260°C peak reflow

Applications

  • Power distribution and battery management (electronic fuses and disconnect switches)
  • In-rush current limitation (capacitor charging, motor surge current)
  • Slow switching to minimize voltage transients and EMI (electrical catalyst heater)
  • Drain-source voltage clamping (dissipation of inductive energy, over-voltage protection)

Specifications

  • 80V maximum drain-source voltage
  • 1.15mΩ maximum drain-source on-resistance
  • 410A maximum drain current
  • Single pulse avalanche
    • 820mJ maximum energy
    • 300A maximum current
  • ±20 maximum gate-source voltage
  • 375W maximum power dissipation
  • -55°C to +175°C operating temperature range
  • Thermal resistance
    • 0.40K/W maximum junction-to-case
    • 14.8K/W typical junction-to-ambient
  • PG-HSOF-8-2 package

Application Circuit

Application Circuit Diagram - Infineon Technologies OptiMOS™ 5 75V-100V Automotive MOSFETs
Yayınlandı: 2024-11-05 | Güncellenmiş: 2024-11-12