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Infineon Technologies OptiMOS™ 6 80V Power MOSFETs

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs set industry benchmark performance with a wide portfolio offering, including PQFN 3.3mm x 3.3mm, SuperSO8, PQFN 5mm x 6mm Dual-Side Cooling, and PQFN 3.3mm x 3.3mm Source-Down. The 80V family is ideal for high switching frequency applications such as telecom, servers, and solar. The performance improvements of OptiMOS™ 6 80V also demonstrate benefits in battery management systems (BMS).

Features

  • N-channel, normal level
  • On-resitances
    • >24% less RDS(on) vs OptiMOS™ 5 in SSO8
    • >28% less RDS(on) vs released PQFN 3mm x 3mm
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low reverse recovery charge
  • Industry standard package portfolio
  • High avalanche energy rating
  • Normal level gate drive
  • Improved power, SOA, and avalanche current
  • +175°C rated
  • Industrial qualified
  • Ideal for high-frequency switching and synchronous rectification
  • Lead-free lead plating and RoHS-compliant
  • Halogen-free per IEC61249-2-21

Applications

  • Telecommunications infrastructure
  • Photovoltaic applications
  • Battery management systems (BMS)
  • Server power supply units (PSU)
  • DC-DC power conversion

Specifications

  • 80V minimum drain-source breakdown voltage
  • 2.4V to 3.5V gate threshold voltage range
  • 100nA maximum gate-source leakage current
  • 37A to 271A maximum continuous drain current range
  • 220S or 230S typical transconductance options
  • 0.75Ω to 1.8Ω gate resistance range
  • 676A to 1084A maximum pulsed drain current range
  • ±20V maximum gate source voltage
  • 3.8W to 375W maximum power dissipation range
  • 1291mJ or 1443mJ maximum single pulse avalanche energy options
  • 100A maximum single pulse avalanche current
  • Maximum thermal resistance
    • 0.4°C/W junction-to-case
    • 40°C/W junction-to-ambient, 6cm2 cooling area
    • 62°C/W junction-to-case ambient, minimal footprint
  • -55°C to +175°C operating temperature range
  • PQFN 3.3mm x 3.3mm, SuperSO8 PQFN 5mm x 6mm with dual-side cooling, and PQFN 3.3mm x 3.3mm with source-down package options

Datasheets

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Infineon Technologies OptiMOS™ 6 Power MOSFETs

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Yayınlandı: 2025-12-10 | Güncellenmiş: 2025-12-23