IXYS IXSA40N120L2-7 SiC MOSFET
IXYS IXSA40N120L2-7 SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting good power cycling characteristics and very fast, low-loss switching behavior. This MOSFET is recommended for use in high-speed industrial switch mode power supplies. The IXSA40N120L2-7 MOSFET features low conduction losses, low gate drive power requirements, and low thermal management effort and is optimized for gate control. This SiC MOSFET is ideal for solar inverters, switch-mode power supplies, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating.
Features
- SiC MOSFET technology with –3/+15 to 18V gate drive
- 1200V drain-source voltage
- 80mΩ drain-source on-state resistance RDS(on)
- High blocking voltage with low on-state resistance
- High-speed switching with low capacitance
- 250W total power dissipation at Tc = 25°C
- Maximum virtual junction temperature of 175°C
- Low input capacitance of Ciss = 1160pF
- Ultra-fast intrinsic body diode
- Kelvin source contact
- Moisture Sensitivity Level 1 (MSL1) rated
Applications
- Solar inverters
- Switch mode power supplies
- UPS
- Motor drives
- DC/DC converters
- EV charging infrastructure
- Induction heating
Dimension Diagram
Related SiC MOSFET
IXYS IXSA80N120L2-7 SiC MOSFET
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
Yayınlandı: 2025-03-03
| Güncellenmiş: 2025-03-17