IXYS LSIC1MO170E0750 N-Channel SiC MOSFET

IXYS LSIC1MO170E0750 is a 750mΩ N-channel Silicon Carbide (SiC) MOSFET optimized for high-frequency and high-efficiency applications. The low gate resistance and ultra-low on-resistance make it suitable for high-frequency switching applications. This device features extremely low gate charge and output capacitance, as well as normally-off operations at all temperatures. The IXYS LSIC1MO170E0750 is suitable for a variety of applications that utilize high-frequency switching, such as switch-mode power supplies, solar inverters, UPS systems, high voltage DC-DC converters, and more.

Features

  • Optimized for high-frequency and high-efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency switching
  • Normally-off operations at all temperatures
  • Ultra-low on-resistance

Applications

  • High-frequency applications
  • Solar inverters
  • Switch mode power supplies
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • High voltage DC-DC converters
  • Battery chargers
  • Induction heating

Specifications

  • 1700VDS
  • Up to 6.2A of continuous drain current
  • 29Ω gate resistance
  • 750mΩ RDS(ON)
  • Up to 60W power dissipation
  • -5VDC to +20VDC recommended gate-source voltage, -6VDC to +22VDC maximum

Dimensions & Pin-Out

IXYS LSIC1MO170E0750 N-Channel SiC MOSFET
Yayınlandı: 2021-06-08 | Güncellenmiş: 2022-03-11