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Microchip Technology 1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.

The Microchip 1200V SIC MOSFETs eliminate the need for an external freewheeling diode and provide superior avalanche ruggedness in a fast and reliable body diode.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175°C
  • Fast and reliable body diode
  • Superior avalanche ruggedness (100% UIS production tested)
  • Creepage distance (typ. >8mm)

Applications

  • Photovoltaic (PV) inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
  • Power supply and distribution

Typical Application

Application Circuit Diagram - Microchip Technology 1200V SIC MOSFETs
View Results ( 8 ) Page
Parça Numarası Veri Sayfası Rds Açık - Tahliye-Kaynağı Direnci Id - Sürekli Tahliye Akımı
MSC020SMB120B4N MSC020SMB120B4N Veri Sayfası 24 mOhms 97 A
MSC025SMB120B4N MSC025SMB120B4N Veri Sayfası 33 mOhms 81 A
MSC030SMB120B4N MSC030SMB120B4N Veri Sayfası 40 mOhms 69 A
MSC040SMB120B4N MSC040SMB120B4N Veri Sayfası 53 mOhms 54 A
MSC045SMB120B4N MSC045SMB120B4N Veri Sayfası 60 mOhms 49 A
MSC060SMB120B4N MSC060SMB120B4N Veri Sayfası 80 mOhms 38 A
MSC080SMB120B4N MSC080SMB120B4N Veri Sayfası 107 mOhms 30 A
MSC031SMC120B4N MSC031SMC120B4N Veri Sayfası 42 mOhms 72 A
Yayınlandı: 2025-09-19 | Güncellenmiş: 2025-09-29