Microchip Technology Silicon Carbide (SiC) Solutions

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Microchip Technology Silicon Carbide (SiC) Solutions provide innovative options to improve system efficiency, smaller form factors, and higher operating temperatures. Applications include industrial, transportation/automotive, medical, aerospace/aviation, defense, and communications products. These next-generation SiC MOSFETs and SiC SBDs are designed with higher repetitive Unclamped Inductive Switching (UIS) capability rated on-resistance or current. Microchip Technology's SiC MOSFETs maintain high UIS capability at approximately 10 to 25 Joules Per Square Centimeter (J/cm²) and robust short circuit protection. Microchip's SiC Schottky Barrier Diodes (SBDs) are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, Microchip Technology's SiC MOSFET and SiC SBD die can be paired together for use in modules. SiC MOSFET and SiC SBD products from Microchip will be qualified to the AEC-Q101 standard.

Features

Extremely low switching losses improves system efficiency
High-power density for a smaller footprint to reduce size and weight
3x more thermally conductive than silicon
Reduced sink requirements to achieve smaller size, lighter weight

High-temperature operation improves reliability at an increased power density
Proven reliability/ruggedness, supply chain, and support with Microchip quality, supply, and support