Nexperia BUK7J2R4-80M N-channel MOSFET
Nexperia BUK7J2R4-80M N-channel MOSFET is based on the Trench 14 low-ohmic split-gate technology. This MOSFET delivers high performance and endurance and is housed in an LFPAK56E package. The BUK7J2R4-80M MOSFET features 80V maximum drain-source voltage, 231A maximum drain current, 294W maximum total power dissipation, and 127nC maximum total gate charge. This MOSFET is used in ultra high-performance power switching, solenoid control, and 12V, 24V, and 48V automotive systems.
Features
- Trench 14 split-gate technology:
- Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in the same footprint
- Fast and efficient switching with optimal damping and low spiking
- LFPAK gull wing leads:
- High board-level reliability absorbing mechanical stress during thermal cycling
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joints
- LFPAK copper clip technology:
- Improved reliability, with reduced Rth, RDSon, and package inductance
- Increases maximum current capability and improves current spreading
- AEC-Q101 qualified
Specifications
- 80V maximum drain-source voltage (25°C ≤ Tj ≤ 175°)
- 231A maximum drain current (VGS=10V, Tmb=25°C)
- 294W maximum total power dissipation (Tmb=25°C)
- -55°C to 175°C junction temperature range
Applications
- 12V, 24V, and 48V automotive systems
- Motor, lighting, and solenoid control
- Ultra high-performance power switching
Package Outline
Yayınlandı: 2024-08-21
| Güncellenmiş: 2024-08-30