Nexperia GANB8R0-040CBA Bi-Directional GaN FET
Nexperia GANB8R0-040CBA Bi-Directional Gallium Nitride (GaN) FET is a 40V, 8.0mΩ bi-directional GaN High Electron-Mobility Transistor (HEMT) housed in a compact 1.7mm x 1.7mm Wafer Level Chip-Scale Package (WLCSP). This normally-off enhancement-mode device offers ultra-high switching speed and low on-state resistance, making the Nexperia GANB8R0-040CBA ideal for applications requiring efficient power management and high power density. The device's bidirectional capability and superior performance make it suitable for high-side load switches, overvoltage protection, and DC-to-DC converters.
Features
- 40V, 8.0mΩ bi-directional GaN HEMT
- Enhancement mode, normally-off power switch
- Bi-directional device
- Ultra-high switching speed capability
- Ultra-low on-state resistance
- High efficiency and high power density
- 1.7mm x 1.7mm Wafer Level Chip-Scale Package (WLCSP)
- Lead-free and RoHS/REACH-compliant
Applications
- High-side load switches
- OVP protection in smartphone USB ports
- DC-to-DC converters
- Power switch circuits
- Stand-by power systems
Specifications
- 40V maximum drain-drian and drain-gate voltage
- 6V maximum gate-drain voltage
- 14A maximum drain current, 70A peak
- 15W maximum total power dissipation
- 6.1mΩ to 11mΩ typical drain-drain on-state resistance range
- 3.2Ω typical gate resistance
- 10.1nC typical total gate charge
- 8nC typical output charge
- 566pF typical input capacitance
- 243pF typical output capacitance
- 145pF typical reverse transfer capacitance
- -40°C to +125°C junction temperature range
- +260°C maximum peak soldering temperature
Pinning Information
Yayınlandı: 2025-04-07
| Güncellenmiş: 2026-01-20