Nexperia NSF0x120L4A0 N-Channel MOSFETs

Nexperia NSF0x120L4A0 N-Channel MOSFETs are silicon carbide (SiC)-based, 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. These MOSFETs exhibit excellent drain-source on-state resistance temperature stability. The series offers low switching losses, fast reverse recovery, and fast switching speeds. The Nexperia MOSFETs provide faster commutation and improved switching due to the additional Kelvin source pin. The NSF0x120L4A0 modules feature a 22V maximum gate-source voltage, +175°C maximum junction temperature, and EU RoHS compliance. Typical applications include electric vehicle (EV) charging infrastructure, photovoltaic inverters, switched mode power supplies (SMPS), uninterruptable power supply, and motor drives.

Features

  • Excellent drain-source on-state resistance temperature stability
  • Low switching losses
  • Fast reverse recovery
  • Fast switching speeds
  • Temperature-independent turn-off switching losses
  • Faster commutation and improved switching due to the additional Kelvin source pin

Applications

  • EV charging infrastructure
  • Photovoltaic inverters
  • SMPS
  • Uninterruptable power supplies
  • Motor drives

Specifications

  • 1200V maximum drain-source voltage
  • 22V maximum gate-source voltage
  • 175°C maximum junction temperature
  • -55°C to 150°C storage temperature range
  • 260°C peak soldering temperature
  • 4-pin TO-247 plastic package
  • EU RoHS compliant

Videos

Package Outline

Mechanical Drawing - Nexperia NSF0x120L4A0 N-Channel MOSFETs
Yayınlandı: 2024-02-15 | Güncellenmiş: 2024-06-11