Nexperia PMZB350UPE 20V P-Channel Trench MOSFET

Nexperia PMZB350UPE 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a leadless, ultra-small DFN1006B-3 (SOT883B) surface-mounted device (SMD) plastic package. The device employs Trench MOSFET technology, has a low threshold voltage, provides very fast switching, and offers 1.8kV ESD protection. The Nexperia PMZB350UPE MOSFET is ideal for relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • 1.8kV ESD protected

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

Package Outline

Mechanical Drawing - Nexperia PMZB350UPE 20V P-Channel Trench MOSFET
Yayınlandı: 2015-05-28 | Güncellenmiş: 2022-03-11