onsemi NTH4L023N065M3S SiC MOSFET
onsemi NTH4L023N065M3S SiC MOSFET offers a 650V blocking voltage rating, 153pF output capacitance, and a TO-247-4L package with Kelvin source configuration. This MOSFET is designed for fast switching applications, and the featured planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The NTH4L023N065M3S MOSFET provides optimum performance when driven with an 18V gate drive and works well with a 15V gate drive. onsemi NTH4L023N065M3S SiC MOSFET is ideal for EV chargers, AI data centers, and solar applications.
Features
- Excellent figure of merit (FOM)
- High-speed switching with low capacitance
- M3S technology
- Ultra-low gate charge
- 100% avalanche tested
- 15V to 18V gate drive
Applications
- Industrial
- Cloud systems
- Uninterruptible power supplies (UPS)
- Energy storage systems (ESS)
- Solar
- EV chargers
- AI data centers
Specifications
- TO-247-4L package with Kelvin source configuration
- 153pF capacitance
- 23mΩ RDS(ON) with low Eon and Eoff losses
- 650V blocking voltage
- +175°C maximum temperature rating
Yayınlandı: 2024-06-07
| Güncellenmiş: 2024-08-06