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onsemi NTJD5121N/NVJD5121N Dual N-Ch Power MOSFETs

onsemi NTJD5121N/NVJD5121N Dual N-Ch Power MOSFETs feature a low RDS(on), gate threshold, and input capacitance. The onsemi NTJD5121N/NVJD5121N MOSFETs feature a 60V drain-to-source voltage and 295A maximum continuous drain current. The NTJD5121N/NVJD5121N are AEC-Q101 qualified and PPAP capable, ideal for automotive applications.

Features

  • Low RDS(on)
  • Low gate threshold
  • Low input capacitance
  • ESD protected gate
  • NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Pb-free device

Applications

  • Low-side load switch
  • DC-DC converters (buck and boost circuits)

Specifications

  • 295A maximum continuous drain current
  • 1.6Ω at 10V and 2.5Ω at 4.5V RDS(ON) maximum
  • 60V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 900A pulsed drain current
  • -55°C to +150°C operating junction and storage temperature range

Pinout

onsemi NTJD5121N/NVJD5121N Dual N-Ch Power MOSFETs
Yayınlandı: 2023-12-26 | Güncellenmiş: 2024-02-06