PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs
PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs are rugged and reliable MOSFETs with -30V drain-source voltage, ±25V gate-source voltage, and 3W power dissipation @TC=25°C. These MOSFETs feature a 50°C/W junction to ambient thermal resistance, -55°C to 175°C operating temperature range, and -2.5V maximum gate-threshold voltage. The PJDx0P03E-AU MOSFETs are AEC-Q101 qualified, 100% UIS tested, and lead-free in compliance with EU RoHS 2.0.
Features
- -30V drain-source voltage
- ±25V gate-source voltage
- 3W power dissipation @TC=25°C
- 50°C/W junction to ambient thermal resistance
- -55°C to 175°C operating temperature range
- -2.5V maximum gate-threshold voltage
- 100% UIS tested
- Reliable and rugged
- AEC-Q101 qualified
- TO-252AA case package
- Lead-free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
- Solderable terminals per MIL-STD-750, Method 2026
On-Region Characteristics
Typical Characteristics
Datasheets
Yayınlandı: 2023-10-10
| Güncellenmiş: 2023-10-16