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Renesas Electronics RBx300x75 AE5-Generation Automotive Silicon IGBTs

Renesas Electronics RBx300x75 AE5-Generation Automotive Silicon IGBTs are available on 200mm or 300mm wafers while providing low power losses. Aimed at electric vehicle (EVs) inverters, the RBx300x75 Si-IGBTs achieve a 10% reduction in power losses compared to the current-generation AE4 products. This power savings will help EV developers save battery power and increase driving range. The transistors are also approximately 10% smaller while maintaining high robustness. The Renesas devices achieve high levels of performance for IGBTs by optimally balancing low power loss and robustness trade-offs. These IGBTs significantly improve performance and safety as modules by minimizing parameter variations among the IGBTs and providing stability when operating IGBTs in parallel. The family includes four AE5 IGBTs, all sold in die form and aimed at 400V to 800V inverters: a pair of 750V transistors rated at 220A or 300A, and a pair of 1.2kV transistors rated at 150A or 200A.

Features

  • Targets 400V to 800V inverters
  • Steady performance throughout the operating junction temperature range from -40°C to +175°C
  • High-performance level with an on-voltage (saturation voltage) of 1.3V, a key value for minimizing power loss
  • 10% higher current density compared to conventional products and a small chip size (100mm2/300A) optimized for low power losses and high input resistance
  • Maintains reverse bias safe operating area (RBSOA) with a maximum Ic current pulse of 600A at +175°C junction temperatures, and a highly robust short circuit withstand time of 4µs at 400V
  • Available as a bare die (wafer)
  • Stable parallel operation by reducing parameter variations to VGE(off) to ±0.5V
  • 50% reduction in the temperature dependence of gate resistance (Rg), minimizing switching losses at high temperatures, spike voltage at low temperatures, and short circuit withstand time, supporting high-performance designs
  • Enables a reduction in inverter power losses, improving power efficiency by up to 6% compared to the current AE4 process at the same current density, allowing EVs to drive longer distances and use fewer batteries
Yayınlandı: 2022-09-01 | Güncellenmiş: 2022-09-30