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ROHM Semiconductor AG508EGD3 -40V -40A P-Channel Power MOSFET

ROHM Semiconductor AG508EGD3 -40V/-40A P-Channel Power MOSFET is an automotive-grade MOSFET that is AEC-Q101 qualified. It has a low on-resistance (0.024Ω at VGS=4.5V) and is suitable for automotive systems applications. It comes in a TO-252 (DPAK) package and is Pb-free and RoHS-compliant. The ROHM Semiconductor AG508EGD3 is rated at a drain-source voltage (VDSS) of -40V and has a continuous drain current (ID) (at VGS=-10) of ±40A.

Features

  • Low on-resistance
  • Pb-free plating and RoHS-compliant
  • 100% Avalanche tested
  • AEC-Q101 qualified

Specifications

  • Static drain-source on-state resistance [RDS(ON)]
    • 18.1Ω (typ.), 24Ω (max.) (VGS=-10V, ID=-10V)
    • 24.0Ω (typ.), 31Ω (max.) (VGS=-4.5V, ID=-10A)
  • -40V drain-source voltage (VDSS)
  • ±40A continuous drain current (ID)(at VGS=-10V)
  • ±80A pulsed drain current (IDP)
  • +5/-20V gate-source voltage (VGSS)
  • Total gate charge (Qg)
    • 27.6nC (typ.) (VDD=-20V, ID=-10A, VGS=-10V)
    • 13.0nC (typ.) (VDD=-20V, ID=-10A, VGS=-4.5V)
  • 53W power dissipation (PD)
  • 175°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor AG508EGD3 -40V -40A P-Channel Power MOSFET
Yayınlandı: 2025-07-23 | Güncellenmiş: 2025-08-06