ROHM Semiconductor RFNL10BM6SFHTL Super Fast Recovery Diode

ROHM Semiconductor RFNL10BM6SFHTL Super Fast Recovery Diode features low switching loss, ultra-low forward voltage, and high current overload capacity. This superfast recovery diode includes silicon epitaxial planar type construction. The RFNL10BM6SFHTL recovery diode operates at 600V repetitive peak reverse voltage, 600V reverse voltage, and 10A average rectified forward current. This superfast recovery diode functions at 100A peak forward surge current, 150°C junction temperature, and stored at -55°C to 150°C temperature range. The RFNL10BM6SFHTL diode is ideal for use in general rectification for PFC discontinuous current mode.