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ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET

ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET is a -30V drain-source voltage (VDSS) and ±40A drain current (ID) rated automotive grade MOSFET that is AEC-Q101 qualified. This MOSFET has a drain-source on-state resistance (RDS(ON)) of 7.52mΩ (max.) with VGS = -10V, ID = -20A or 11.3mΩ (max.) with VGS = -4.5V, ID = -10A. The total gate charge (Qg) is 65.0nC (typ.) with VDD = -15V, ID = -10A, VGS = -10V. The ROHM Semiconductor RH7E04BBJFRA is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Features

  • Wettable flanks product
  • AEC-Q101 qualified
  • 100% avalanche tested

Applications

  • ADAS
  • Information
  • Lighting
  • Body

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • 7.5mΩ (max.) (VGS = -10V, ID = -20A)
    • 11.3mΩ (max.) (VGS = -4.5V, ID = -10A)
  • 75W power dissipation (PD)
  • Total gate charge (Qg)
    • 65.0nC (typ.) (VDD = -15V, ID = -10A, VGS = -10V)
    • 34.0nC (typ.) (VDD = -15V, ID = -10A, VGS = -4.5V)
  • +175°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET

Package Diagram

Chart - ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET
Yayınlandı: 2025-07-23 | Güncellenmiş: 2025-08-19