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ROHM Semiconductor RQ3G120BKFRA 40V N-Channel Power MOSFET

ROHM Semiconductor RQ3G120BKFRA 40V N-Channel Power MOSFET is a 40V drain-source voltage (VDSS) and ±12A continuous drain current (ID) rated automotive-grade MOSFET that is AEC-Q101 qualified. The drain-source on-state resistance [RDS(ON)] is 17.4mΩ (max.) (VGS = 10V, ID = 12A) and comes in a 3.3mm x 3.3mm HSMT8AG package. The ROHM Semiconductor RQ3G120BKFRA MOSFET is ideal for ADAS, information, lighting, and body applications.

Features

  • Small high-powered package reduces mounting area by 64% at a maximum
  • AEC-Q101 qualified
  • Realization of high mounting reliability by original terminal and plating treatment

Applications

  • ADAS
  • Information
  • Lighting
  • Body

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • 17.4mΩ (max.) (VGS = 10V, ID = 12A)
    • 28.0mΩ (max.) (VGS = 4.5V, ID = 6A)
  • 40W power dissipation (PD)
  • Total gate charge (Qg)
    • 8.5nC (typ.) (VDD = 20V, ID = 10A, VGS = 10V)
    • 4.8nC (typ.) (VDD = 20V, ID = 10A, VGS = 4.5V)
  • +150°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor RQ3G120BKFRA 40V N-Channel Power MOSFET

Package Diagram

Mechanical Drawing - ROHM Semiconductor RQ3G120BKFRA 40V N-Channel Power MOSFET
Yayınlandı: 2025-07-25 | Güncellenmiş: 2025-08-19