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STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor

STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor is a high-performance enhancement-mode PowerGaN transistor optimized for efficient power conversion in demanding applications. With a drain-source voltage rating of 700V and a maximum on-resistance of 350mΩ, the STMicroelectronics SGT350R70GTK delivers low conduction losses and fast switching capabilities thanks to Gallium Nitride (GaN) technology. Packaged in a thermally enhanced DPAK format, the device supports high current handling and improved heat dissipation, suitable for high-density power designs. A low gate charge and output capacitance enable high-frequency operation, ideal for use in power factor correction (PFC), resonant converters, and other advanced power topologies in industrial, telecom, and consumer electronics sectors.

Features

  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Zero reverse recovery charge
  • ESD safeguard
  • RoHS compliant

Applications

  • Consumer electronics
  • Industrial systems
  • Data centers
  • Adapters for tablets, notebooks, and AIO
  • USB Type-C® PD adapters and quick chargers
  • Resonant converters
  • Power Factor Correction (PFC) stages

Specifications

  • 700V maximum drain-source voltage
  • 800V maximum transient drain-source voltage at tp < 200μs
  • -1.4V to 7V maximum gate-source voltage
  • 6A maximum continuous drain current at +25°C
  • 10A maximum pulse drain current at tp = 10μs
  • 47W maximum total power dissipation at +25°C
  • 2.6V typical source-drain reverse conduction voltage
  • Switching
    • 0.9ns typical turn-on delay time
    • 3.5ns typical rise time
    • 1.2ns typical turn-off delay time
    • 6.1ns typical fall time
  • Static
    • 12μA maximum drain-source leakage current
    • 30μA typical gate-source leakage current
    • 1.2V to 2.5V gate threshold voltage range
    • 350mΩ maximum static drain-source on-resistance
  • 2kV Human Body Model (HBM) ESD protection
  • -55°C to +150°C operating junctin temperature range
  • Dynamic
    • 50pF typical input capacitance
    • 15pF typical output capacitance
    • 0.2pF typical reverse transfer capacitance
    • 20pF typical equivalent output capacitance, energy related
    • 28pF typical equivalent output capacitance, time related
    • 11Ω typical intrinsic gate resistance
    • 2.2V typical gate plateau voltage
    • 1.5nC typical total gate charge
    • 0.15nC typical gate-source charge
    • 0.5nC typical gate-drain charge
    • 0nC typical reverse recovery charge
    • 13nC typical output charge
  • Thermal resistance
    • 2.63°C/W junction-to-case
    • 56°C/W junction-to-ambient

Schematic

Schematic - STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor

Test Circuits

Mechanical Drawing - STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor

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Yayınlandı: 2025-10-20 | Güncellenmiş: 2025-10-28