Geri dön - Toshiba

Toshiba TRSx SiC Schottky Barrier Diodes

Toshiba TRSx SiC Schottky Barrier Diodes are a 3rd generation chip design with a repetitive peak reverse voltage (VRRM) rating of 1200V. The forward DC current rating (IF(DC)) for the TRS30N120HB is 15A per leg or 30A for both legs, and the TRS40N120HB is 20A per leg or 40A for both legs. These devices are available in a standard TO-247 package. Toshiba TRSx Sic Schottky Barrier Diodes are ideal in power factor correction, solar inverters, uninterruptible power supplies, and DC-DC converter applications.

Features

  • 3rd generation chip design
  • 1200V repetitive peak reverse voltage (VRRM)
  • Forward DC current [IF(DC)]
    • TRS30N120HB: 15A per leg or 30A both legs at TC = +150°C
    • TRS40N120HB: 20A per leg or 40A both legs at TC = +147°C
  • Low 1.27V (typ.) forward voltage (VF) per leg
  • Low total capacitive charge (Qc)
    • TRS30N120HB: 80nC per leg (typ.)
    • TRS40N120HB: 108nC per leg (typ.)
  • Low reverse current (IR)
    • TRS30N120HB: 1.4µA per leg (typ.)
    • TRS40N120HB: 1.8µA per leg (typ.)

Applications

  • Power Factor Correction (PFC)
  • Solar inverters
  • Uninterruptible Power Supplies (UPS)
  • DC-DC converters

Packaging & Internal Circuit

Mechanical Drawing - Toshiba TRSx SiC Schottky Barrier Diodes
Yayınlandı: 2025-03-26 | Güncellenmiş: 2025-08-02