onsemi UF3N120007K4S 1200V JFET N-Channel Transistor
onsemi UF3N120007K4S 1200V EliteSic JFET N-Channel Transistor is a 1200V, 7.1mΩ high-performance Gen 3 normally-on SiC JFET transistor. This device exhibits ultra-low on-resistance [RDS(ON)] in a TO247-4 package, making it ideal for addressing the challenging thermal constraints of solid-state circuit breakers and relay applications. The onsemi UF3N120007K4SJFET is a robust technology capable of the high-energy switching required in circuit protection applications.
Features
- Single digit on-resistance [RDS(ON)]
- +175°C maximum operating temperature
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attached for excellent thermal resistance
- Lead-free, halogen-free, and RoHS-compliant
Applications
- Solid state/semiconductor circuit breakers
- Solid state/semiconductor relays
- Battery disconnects
- Surge protection
- Inrush current control
- Induction heating
Specifications
- 1200V drain-source voltage (VDS)
- 120A continuous drain current (ID) at TC < +112°C
- 550A pulsed drain current (IDM) at TC < +25°C
- 789W power dissipation (PTOT) at TC < +25°C
- 830nC total gate charge (QG) with VDS = 800V, ID = 100A, VGS = -18V to 0V
- Drain-source on-resistance [RDS(ON)]
- 7.1mΩ (typ.) with VGS = 2V, ID = 100A, TJ = +25°C
- 8.6mΩ (typ.) with VGS = 0V, ID = 100A, TJ = +25°C
- 15.5mΩ (typ.) with VGS = 2V, ID = 100A, TJ = +175°C
- 17.8mΩ (typ.) with VGS = 0V, ID = 100A, TJ = +175°C
- +175°C maximum junction temperature (TJ,max)
Circuit Diagram
Package Diagram
Related JFET Transistor
onsemi UF3N 1700V-400mW SiC Normally On JFET
Exhibits ultra-low on-resistance and gate charge that allows for low conduction and switching loss.
Yayınlandı: 2025-07-30
| Güncellenmiş: 2025-08-05