Qorvo GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Related Products
Qorvo QPD0005 GaN RF Transistors
Single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation.
Qorvo QPD GaN RF Transistors
Used in Doherty architecture for the final stage of a base station power amplifier.
Qorvo QPD1009 & QPD1010 GaN RF Transistors
Discrete GaN on SiC HEMTs which operate from DC to 4GHz constructed with the QGaN25HV process.
Qorvo QPD1013 GaN RF Transistor
High-power, wide-bandwidth HEMT which operates from DC to 2.7GHz.
Qorvo 5G Solutions
Support 5G deployment and growing mobile data with a broad range of RF connectivity solutions.
Evaluation Boards
Qorvo QPD1013 GaN RF Transistor Evaluation Board
Evaluates the QPD1013 GaN RF transistor.
Qorvo QPD0005 Evaluation Board
Designed to evaluate QPD0005 GaN single-stage, unmatched SiC RF transistors.
| Parça Numarası | Açıklama | Veri Sayfası |
|---|---|---|
| QPD0060 | GaN FETs DC-3.6GHz GaN 90W 48V |  |
| QPD1009 | GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN | |
| QPD0030 | GaN FETs DC-4GHz 45W GaN 48V | |
| QPD1009-EVB1 | RF Geliştirme Araçları DC-4GHz 15W 28-50V Eval Board | |
| QPD0030EVB01 | RF Geliştirme Araçları DC-4 GHz, 45W, 48V GaN RF Pwr Tr | |
| QPD1010-EVB1 | RF Geliştirme Araçları DC-4GHz 10W 28-50V Eval Board | |
| QPD1013EVB01 | RF Geliştirme Araçları DC-2.7GHz 150W Eval Board | |