Qorvo QPD1016L GaN RF Transistor
Qorvo QPD1016L GaN RF Transistor is a 500W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from DC to 1.7GHz. The QPD1016L provides a linear gain of 18dB at 1.3GHz and features a drain efficiency of 67% at 3dB compression. The device can support pulsed and linear operations.
The QPD1016L GaN RF Transistor is housed in an industry-standard air-cavity NI-780 package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The QPD1016L package includes an ear flange for bolt-down placement.
Features
- DC to 1.7GHz frequency range
- 537W output power (P3dB) at 1.3GHz
- 18dB linear gain a t 1.3GHz
- 67% power-added efficiency (PAE) at 3dB
- 57.3dBm saturated output power (PSAT)
- +50V drain voltage (VD)
- 1000mA drain bias current (IDQ)
- Supports CW and PWM operation
- -40°C to +85°C operating temperature range
- Eared NI-780 air cavity package
- Halogen-free, lead-free, and RoHS compliant
Applications
- Identification Friend or Foe (IFF)
- Avionics
- Military and civilian radar
- Test Instrumentation
Development Tools
Qorvo QPD1016LEVB01 Evaluation Board
Demonstration and development platform for the QPD1016L GaN RF Transistor.
Block Diagram
Package Outline
Yayınlandı: 2022-07-11
| Güncellenmiş: 2022-07-14