Qorvo QPD1026L GaN RF Input-Matched Transistor
Qorvo QPD1026L GaN RF Input-Matched Transistor is a 1300W (P3dB) discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from 420MHz to 450MHz. The QPD1026L provides a linear gain of 25.9dB at 440MHz. Input prematch within the package results in easier external board matching, saving board space. The device supports both continuous wave and pulsed operations.
The Qorvo QPD1026L GaN RF Input-Matched Transistor is housed in an industry-standard NI-1230 air cavity package and is ideally suited for amateur radio, public safety radio, and radiolocation applications. The QPD1026L package includes an ear flange for bolt-down placement.
Features
- 420MHz to 450MHz frequency range
- 1318W output power (P3dB) at 440MHz
- 25.9dB linear gain at 440MHz
- 80.8% power-added efficiency (PAE)
- 61.2dBm saturated output power (PSAT)
- +65V drain voltage (VD)
- 1500mA drain bias current (IDQ)
- Supports CW and PWM operation
- -40°C to +85°C operating temperature range
- Eared NI-1230 air cavity package
- Halogen-free, lead-free, and RoHS compliant
Applications
- UHF radar
- Amateur radio
- Public safety radio
- Radiolocation service
Development Tools
Qorvo QPD1026LEVB Evaluation Board
Demonstration and development platform for the QPD1026L GaN RF Input-Matched Transistor.
Block Diagram
Pin Designations
Yayınlandı: 2022-02-03
| Güncellenmiş: 2022-03-11