ROHM Semiconductor RBR40NSx0AFH Automotive Schottky Barrier Diodes
ROHM Semiconductor RBR40NSx0AFH Automotive Schottky Barrier Diodes are highly reliable low VF type diodes. These barrier diodes feature power mold type and cathode common dual type and come with Silicon epitaxial planar structure. The RBR40NSx0AFH diodes are stored at -55°C to +150°C temperature range. These barrier diodes function at 40A average rectified forward current, 100A peak forward surge current, and +150°C junction temperature. ROHM Semiconductor RBR40NSx0AFH automotive Schottky barrier diodes are ideal for use in switching power supply
Features
- High reliability
- Power mold type
- Cathode common dual type
- Low VF
- Silicon epitaxial planar structure
Specifications
- RBR40NS40AFH
- 40V repetitive peak reverse voltage
- 40V reverse voltage
- RBR40NS30AFH
- 30V repetitive peak reverse voltage
- 30V reverse voltage
- -55°C to +150°C storage temperature range
- +150°C junction temperature
- 40A average rectified forward current
- 100A peak forward surge current
Circuit Diagram
Associated Product
ROHM Semiconductor Automotive Schottky Barrier Diodes
A wide array of high-reliability, low-loss diodes are available in various packages.
Yayınlandı: 2020-04-07
| Güncellenmiş: 2024-09-24