ROHM Semiconductor RGS30TSX2DHR & RGS30TSX2HR AEC-Q101 IGBTs
ROHM Semiconductor RGS30TSX2DHR and RGS30TSX2HR AEC-Q101 Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter use in automotive and industrial applications. The RGS30TSX2DHR and RGS30TSX2HR offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.
Thye ROHM Semiconductor RGS30TSX2DHR & RGS30TSX2HR IGBTs are offered in a TO-247N package and are AEC-Q101 qualified for use in automotive applications. The RGS30TSX2DHR also features an integrated Fast Recovery Diode (FRD).
Features
- AEC-Q101 qualified
- 10μs short-circuit withstand time
- Built-in FRD fast and soft recovery diode (RGS30TSX2DHR only)
- 1200V collector-emitter voltage (VCES)
- ±30V gate-emitter voltage (VGES)
- 1.7V collector-emitter saturation voltage (VCE(sat))
- 15A collector current (IC)
- 7V gate-emitter threshold voltage (VGE(th))
- 267W power dissipation (PD)
- -40°C to +175°C operating junction temperature range
- TO-247N package
- Pb-free and RoHS compliant
Applications
- General inverter for automotive and industrial use
Related Products
ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs
Provide low conduction loss and low VCE(sat) with reduced switching losses.
Pin Layout
Yayınlandı: 2021-03-17
| Güncellenmiş: 2022-03-11