ROHM Semiconductor SCTxxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs
ROHM Semiconductor SCT3xxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs utilize a proprietary trench gate structure to reduce ON resistance by 50% and input capacitance by 35% over planar-type SiC MOSFETs. The MOSFETs include an additional pin that separates the driver and power source pins, eliminating the inductance component's effects in reducing Vgs, ensuring faster switching speeds. The ROHM Semiconductor Trench-Type MOSFETs feature a high voltage resistance, low ON resistance, fast switching speed, simple to drive, and easy to parallel.
Features
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating
- RoHS compliant
Applications
- Solar inverters
- DC/DC converters
- Switch mode power supplies
- Induction heating
- Motor drives
Specifications
- SCT3xxxAW7
- 650V Drain-source voltage
- Drain-source On-state Resistance (typ.)
- 30mΩ (SCT3030AW7), 60mΩ (SCT3060AW7), 80mΩ (SCT3080AW7), 120mΩ (SCT3120AW7)
- Drain Current
- 70A (SCT3030AW7), 38A (SCT3060AW7), 29A (SCT3080AW7), 21A (SCT3120AW7)
- Total Power Dissipation
- 267W (SCT3030AW7), 159W (SCT3060AW7), 125W (SCT3080AW7), 100W (SCT3120AW7)
- SCT3xxxKW7
- 1200V Drain-source voltage
- Drain-source On-state Resistance (typ.)
- 40mΩ (SCT3040KW7), 80mΩ (SCT3080KW7), 105mΩ (SCT3105KW7), 160mΩ (SCT3160KW7)
- Drain Current
- 56A (SCT3040KW7), 30A (SCT3080KW7), 23A (SCT3105KW7), 17A (SCT3160KW7)
- Total Power Dissipation
- 267W (SCT3040KW7), 159W (SCT3080KW7), 125W (SCT3105KW7), 100W (SCT3160KW7)
Circuit Diagram
Associated Products
ROHM Semiconductor SCT3x 3rd Generation SiC Trench MOSFETs
Proprietary trench structure reduces ON resistance and input capacitance.
Yayınlandı: 2020-10-16
| Güncellenmiş: 2024-10-22