STMicroelectronics STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.
Features
- Low RDS(on)
- Minimal RDS(on) x Qg for increased system efficiency and more compact designs
- Lowest Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Videos
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Complete Your Design
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