Texas Instruments LMG342xR030 GaN Field Effect Transistors (FETs)

The Texas Instruments LMG342xR030 integrates a silicon driver that enables switching speeds up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, actively controlling EMI and optimizing switching performance. The LMG3425R030 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.