Toshiba SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs
Toshiba SSM6N357R and SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel components designed for relay driver applications. The SSM6N357R,LF comes with two channels, whereas the SSM3K357R,LF comes with a single channel. These AEC-Q101-qualified MOSFETs feature a 3V gate drive voltage, built-in internal Zener diodes/resistors, and a 2kV class Human Body Model (HBM) ESD rating. The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, +150°C maximum channel temperature, and 12.6mJ single-pulse avalanche energy.
Features
- SSM6N357R,LF
- 3V gate drive voltage
- Built-in internal Zener diodes and resistors
- 2kV class HBM
- N-channel x 2 + active clamp Zener polarity
- Independent internal connection
- 6-pin TSOP6F package
- 2.9mm x 2.8mm x 0.8mm dimensions
- SSM3K357R,LF
- 3V gate drive voltage
- Built-in internal Zener diodes and resistors
- 2kV class HBM
- N-channel + active clamp Zener polarity
- Single internal connection
- 3-pin SOT-23F package
- 2.9mm x 2.4mm x 0.8mm dimensions
Specifications
- 0.65A drain current (ID)
- 1W power dissipation (PD)
- ±12V gate-source voltage (VGSS)
- 2.4Ω maximum drain-source ON-resistance at VGS=3V
- 1.8Ω maximum drain-source ON-resistance at VGS=5V
- 43pF typical input capacitance (Ciss)
- 1.5nC typical total gate charge (Qg)
Datasheets
Mechanical Drawings
Related Products
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Toshiba SSM3 High Current MOSFETs
High drain current rating, low capacitance, low on-resistance, and fast switching.
Yayınlandı: 2018-07-04
| Güncellenmiş: 2023-02-16